
The 2PB710AQ,115 is a PNP transistor with a maximum collector-base voltage of 60V, collector-emitter voltage of 50V, and maximum DC collector current of 0.5A. It has a maximum power dissipation of 250mW and a minimum DC current gain of 40 at 500mA and 10V, or 85 at 150mA and 10V. The transistor is packaged in a TO-236 surface mount package and has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C.
Nexperia 2PB710AQ,115 technical specifications.
| Package/Case | MPAK |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3.1(Max) |
| Package Width (mm) | 1.7(Max) |
| Package Height (mm) | 1.2(Max) |
| Mounting | Surface Mount |
| Jedec | TO-236 |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.5A |
| Maximum Power Dissipation | 250mW |
| Minimum DC Current Gain | 40@500mA@10V|85@150mA@10V |
| Maximum Transition Frequency | 100(Min)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Nexperia 2PB710AQ,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.