
The 2PB710AR,115 is a PNP bipolar junction transistor with a maximum collector-base voltage of 60V and a maximum collector-emitter voltage of 50V. It has a maximum DC collector current of 0.5A and a maximum power dissipation of 250mW. The transistor is packaged in a TO-236 surface mount package with a maximum length of 3.1mm, maximum width of 1.7mm, and maximum height of 1.2mm. It operates over a temperature range of -65°C to 150°C.
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Nexperia 2PB710AR,115 technical specifications.
| Package/Case | MPAK |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3.1(Max) |
| Package Width (mm) | 1.7(Max) |
| Package Height (mm) | 1.2(Max) |
| Mounting | Surface Mount |
| Jedec | TO-236 |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.5A |
| Maximum Power Dissipation | 250mW |
| Minimum DC Current Gain | 120@150mA@10V|40@500mA@10V |
| Maximum Transition Frequency | 120(Min)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
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