The BC637,116 is a TO-92 packaged NPN bipolar power transistor with a maximum collector-base voltage of 60V and a maximum collector-emitter voltage of 60V. It has a maximum power dissipation of 830mW and a minimum DC current gain of 63 at various collector current and base voltage conditions. The transistor is rated for operation over a temperature range of -65°C to 150°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Nexperia BC637,116 technical specifications.
General
| Package/Case | TO-92 |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 4.8(Max) |
| Package Width (mm) | 4.2(Max) |
| Package Height (mm) | 5.2(Max) |
| Pin Pitch (mm) | 2.54 |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 830mW |
| Minimum DC Current Gain | 63@150mA@2V|63@5mA@2V|40@500mA@2V |
| Maximum Transition Frequency | 180(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | H2HX9 |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Nexperia BC637,116 Datasheet
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