The BC640,116 is a PNP bipolar junction transistor with a maximum collector-base voltage of 100V and a maximum collector-emitter voltage of 80V. It has a maximum DC collector current of 1A and a maximum power dissipation of 830mW. The transistor is packaged in a TO-92 package with a 2.54mm pin pitch and is designed for through-hole mounting. It operates over a temperature range of -65°C to 150°C.
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| Package/Case | TO-92 |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 4.8(Max) |
| Package Width (mm) | 4.2(Max) |
| Package Height (mm) | 5.2(Max) |
| Pin Pitch (mm) | 2.54 |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 830mW |
| Minimum DC Current Gain | 63@150mA@2V|63@5mA@2V|40@500mA@2V |
| Maximum Transition Frequency | 145(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
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