The BS108,126 is a single N-channel enhancement MOSFET with a maximum drain-source voltage of 200V and a maximum continuous drain current of 0.3A. It has a maximum drain-source resistance of 5000 ohms at 2.8V and a maximum power dissipation of 1000mW. The device is packaged in a TO-92 package and is suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C.
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Nexperia BS108,126 technical specifications.
| Package/Case | TO-92 |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 4.8(Max) |
| Package Width (mm) | 4.2(Max) |
| Package Height (mm) | 5.2(Max) |
| Pin Pitch (mm) | 2.54 |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.3A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 100@25VpF |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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