The BSP61,115 is a PNP bipolar junction transistor with a single dual collector configuration. It has a maximum collector-emitter voltage of 60V and a maximum collector current of 1A. The transistor can dissipate up to 1250mW of power. It operates over a temperature range of -65°C to 150°C. The BSP61,115 is packaged in a 4-pin SC-73 package.
PackageSC-73
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Technical Specifications
Nexperia BSP61,115 technical specifications.
General
| Type | PNP |
| Configuration | Single Dual Collector |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Continuous DC Collector Current | 1A |
| Maximum Power Dissipation | 1250mW |
| Maximum Base Emitter Saturation Voltage | [email protected]@500mAV |
| Maximum Collector-Emitter Saturation Voltage | [email protected]@500mAV |
| Minimum DC Current Gain | 1000@150mA@10V|2000@500mA@10V |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Pin Count | 4 |
| Package/Case | SC-73 |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Nexperia BSP61,115 Datasheet
Download the complete datasheet for Nexperia BSP61,115 to view detailed technical specifications.
No datasheet is available for this part.