The BUK1M200-50SGTD,11 is a quad N-channel enhancement MOSFET from Nexperia, packaged in a surface-mount SO-20 package. It has a maximum drain-source voltage of 50V, a maximum continuous drain current of 2.7A, and a maximum drain-source resistance of 380mΩ. The device can dissipate up to 9.4W of power and operates over a temperature range of -55°C to 150°C.
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| Package/Case | SO |
| Pin Count | 20 |
| PCB | 20 |
| Package Length (mm) | 13(Max) |
| Package Width (mm) | 7.6(Max) |
| Package Height (mm) | 2.45(Max) |
| Seated Plane Height (mm) | 2.65(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Quad |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 4 |
| Maximum Drain Source Voltage | 50V |
| Maximum Continuous Drain Current | 2.7A |
| Maximum Drain Source Resistance | 380mOhm |
| Maximum Power Dissipation | 9400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU |
Download the complete datasheet for Nexperia BUK1M200-50SGTD,11 to view detailed technical specifications.
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