N-channel enhancement mode power MOSFET in a DPAK (TO-252) surface-mount package. Features a maximum drain-source voltage of 40V, continuous drain current of 78A, and low drain-source on-resistance of 13mΩ at 10V. Utilizes TrenchFET process technology for efficient power handling, with a maximum power dissipation of 150W and an operating temperature range of -55°C to 175°C. Single element configuration with 3 pins (2+tab) for robust thermal management.
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Nexperia BUK7213-40A,118 technical specifications.
| Package/Case | DPAK |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 6.22(Max) |
| Package Height (mm) | 2.38(Max) |
| Mounting | Surface Mount |
| Jedec | TO-252 |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 78A |
| Maximum Drain Source Resistance | 13@10VmOhm |
| Typical Gate Charge @ Vgs | 47@10VnC |
| Typical Gate Charge @ 10V | 47nC |
| Typical Input Capacitance @ Vds | 1684@25VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
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