N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 40A continuous drain current. Dual dual drain configuration with two elements per chip, utilizing TMOS process technology. Surface mountable in an 8-pin LFPAK-D package (5.3mm x 4.7mm x 1.05mm max dimensions). Offers low drain-source on-resistance of 5.1mOhm at 10V Vgs and a maximum power dissipation of 68W. Operates across a wide temperature range from -55°C to 175°C.
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| Package/Case | LFPAK-D |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 1.05(Max) |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 40A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 5.1@10VmOhm |
| Typical Gate Charge @ Vgs | 31.1@10VnC |
| Typical Gate Charge @ 10V | 31.1nC |
| Typical Input Capacitance @ Vds | 1764@25VpF |
| Maximum Power Dissipation | 68000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
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