N-channel Power MOSFET with 100V drain-source voltage and 39A continuous drain current. Features TrenchFET process technology for enhanced performance, housed in a TO-220AB package with through-hole mounting. Offers a low drain-source on-resistance of 39mΩ at 10V, with a typical gate charge of 48nC at 5V. Maximum power dissipation is 158W, operating across a temperature range of -55°C to 175°C.
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Nexperia BUK9540-100A,127 technical specifications.
| Package/Case | TO-220AB |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.5(Max) |
| Package Height (mm) | 9.4(Max) |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±15V |
| Maximum Continuous Drain Current | 39A |
| Maximum Drain Source Resistance | 39@10VmOhm |
| Typical Gate Charge @ Vgs | 48@5VnC |
| Typical Input Capacitance @ Vds | 2304@25VpF |
| Maximum Power Dissipation | 158000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | H2HX9 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
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