N-channel enhancement mode power MOSFET in a D2PAK package, featuring a 40V drain-source voltage and 75A continuous drain current. This single-element device utilizes TMOS process technology and offers a low drain-source on-resistance of 6.4 mOhm at 10V. Designed for surface mounting, it operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 96000 mW.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Nexperia BUK968R3-40E,118 technical specifications.
General
| Package/Case | D2PAK |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 9.4(Max) |
| Package Height (mm) | 4.5(Max) |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | 10V |
| Maximum Continuous Drain Current | 75A |
| Maximum Gate Threshold Voltage | 2.1V |
| Maximum Drain Source Resistance | 6.4@10VmOhm |
| Typical Gate Charge @ Vgs | 20.9@5VnC |
| Typical Input Capacitance @ Vds | 1936@25VpF |
| Maximum Power Dissipation | 96000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia BUK968R3-40E,118 Datasheet
Download the complete datasheet for Nexperia BUK968R3-40E,118 to view detailed technical specifications.
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