Automotive N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 21A continuous drain current. This dual-drain configured component utilizes TMOS process technology and is housed in an 8-pin LFPAK-D surface-mount package with dimensions of 5.3mm x 4.7mm x 1.05mm. Key electrical characteristics include a maximum drain-source resistance of 42 mOhm at 10V and a typical gate charge of 33.5 nC at 10V. Operating across a temperature range of -55°C to 175°C, this MOSFET offers a maximum power dissipation of 53000 mW.
PackageLFPAK-D
MountingSurface Mount
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Technical Specifications
Nexperia BUK9K45-100E,115 technical specifications.
General
| Package/Case | LFPAK-D |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 1.05(Max) |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | 10V |
| Maximum Continuous Drain Current | 21A |
| Maximum Gate Threshold Voltage | 2.1V |
| Maximum Drain Source Resistance | 42@10VmOhm |
| Typical Gate Charge @ Vgs | 33.5@10VnC |
| Typical Gate Charge @ 10V | 33.5nC |
| Typical Input Capacitance @ Vds | 1614@25VpF |
| Maximum Power Dissipation | 53000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia BUK9K45-100E,115 Datasheet
Download the complete datasheet for Nexperia BUK9K45-100E,115 to view detailed technical specifications.
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