Automotive N-channel enhancement mode power MOSFET in an 8-pin LFPAK-D surface mount package. Features 40V drain-source voltage, 40A continuous drain current, and low 6mOhm drain-source resistance at 10V. Dual dual drain configuration with two elements per chip, utilizing TMOS process technology. Operating temperature range from -55°C to 175°C, with a maximum power dissipation of 68W.
PackageLFPAK-D
MountingSurface Mount
Quick Jump:
Technical Specifications
Nexperia BUK9K6R2-40E technical specifications.
General
| Package/Case | LFPAK-D |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 1.05(Max) |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | 10V |
| Maximum Continuous Drain Current | 40A |
| Maximum Gate Threshold Voltage | 2.1V |
| Maximum Drain Source Resistance | 6@10VmOhm |
| Typical Gate Charge @ Vgs | 35.4@10VnC |
| Typical Gate Charge @ 10V | 35.4nC |
| Typical Input Capacitance @ Vds | 2461@25VpF |
| Maximum Power Dissipation | 68000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Nexperia BUK9K6R2-40E Datasheet
Download the complete datasheet for Nexperia BUK9K6R2-40E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.