N-channel Power MOSFET featuring a 55V drain-source voltage and 9.16A continuous drain current. This dual-configuration MOSFET utilizes TrenchP process technology and is housed in a 20-pin SO package for surface mounting. Key electrical characteristics include a 22.6mOhm maximum drain-source resistance at 10V and a typical gate charge of 23nC at 5V. Operating across a wide temperature range of -55°C to 150°C, this component offers a maximum power dissipation of 3900mW.
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| Package/Case | SO |
| Pin Count | 20 |
| PCB | 20 |
| Package Length (mm) | 13(Max) |
| Package Width (mm) | 7.6(Max) |
| Package Height (mm) | 2.45(Max) |
| Seated Plane Height (mm) | 2.65(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | TrenchP |
| Maximum Drain Source Voltage | 55V |
| Maximum Gate Source Voltage | 15V |
| Maximum Continuous Drain Current | 9.16A |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 22.6@10VmOhm |
| Typical Gate Charge @ Vgs | 23@5VnC |
| Typical Input Capacitance @ Vds | 1736@25VpF |
| Maximum Power Dissipation | 3900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
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