The BUX87P,127 is a single NPN bipolar junction transistor with a maximum collector-emitter voltage of 450V and a maximum DC collector current of 0.5A. It has a maximum power dissipation of 42W and is packaged in the SOT-82 through-hole package. The transistor is made of silicon material and has a minimum DC current gain of 26 at 50mA and 5V. It operates over a temperature range of -40°C to 150°C.
Nexperia BUX87P,127 technical specifications.
| Package/Case | SOT-82 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 7.8(Max) |
| Package Width (mm) | 2.8(Max) |
| Package Height (mm) | 11.1(Max) |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 450V |
| Maximum DC Collector Current | 0.5A |
| Maximum Power Dissipation | 42000mW |
| Material | Si |
| Minimum DC Current Gain | 26@50mA@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
No datasheet is available for this part.
