Automotive-grade N-channel enhancement mode MOSFET, dual configuration, featuring a 30V drain-source voltage and 0.2A continuous drain current. This small signal transistor utilizes TMOS process technology and is housed in a compact 6-pin SOT-666 surface-mount package with dimensions of 1.7mm (L) x 1.3mm (W) x 0.6mm (H). Key electrical specifications include a maximum gate-source voltage of 20V, a maximum drain-source on-resistance of 4500 mOhm at 10V, and a typical gate charge of 0.34 nC at 4.5V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 370mW.
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Nexperia NX3020NAKV,115 technical specifications.
| Package/Case | SOT-666 |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.7(Max) |
| Package Width (mm) | 1.3(Max) |
| Package Height (mm) | 0.6(Max) |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 0.2A |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Drain Source Resistance | 4500@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 32@10VpF |
| Maximum Power Dissipation | 370mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
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