N-channel Power MOSFET with 30V drain-source voltage and 68.9A continuous drain current. Features TrenchFET process technology for low on-resistance (13mΩ at 10V). Housed in a TO-220AB package with through-hole mounting, this single-element transistor offers a maximum power dissipation of 111W and operates from -55°C to 175°C. Typical gate charge is 9.6nC at 5V, and input capacitance is 920pF at 25V.
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
Nexperia PHP63NQ03LT,127 technical specifications.
General
Package/Case
TO-220AB
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
9.4(Max)
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
TrenchFET
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
68.9A
Maximum Drain Source Resistance
13@10VmOhm
Typical Gate Charge @ Vgs
9.6@5VnC
Typical Input Capacitance @ Vds
920@25VpF
Maximum Power Dissipation
111000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
H2HX9
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU
Datasheet
Nexperia PHP63NQ03LT,127 Datasheet
Download the complete datasheet for Nexperia PHP63NQ03LT,127 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.