N-channel Power MOSFET with 30V drain-source voltage and 68.9A continuous drain current. Features TrenchFET process technology for low on-resistance (13mΩ at 10V). Housed in a TO-220AB package with through-hole mounting, this single-element transistor offers a maximum power dissipation of 111W and operates from -55°C to 175°C. Typical gate charge is 9.6nC at 5V, and input capacitance is 920pF at 25V.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Nexperia PHP63NQ03LT,127 technical specifications.
General
| Package/Case | TO-220AB |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.4(Max) |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 68.9A |
| Maximum Drain Source Resistance | 13@10VmOhm |
| Typical Gate Charge @ Vgs | 9.6@5VnC |
| Typical Input Capacitance @ Vds | 920@25VpF |
| Maximum Power Dissipation | 111000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Nexperia PHP63NQ03LT,127 Datasheet
Download the complete datasheet for Nexperia PHP63NQ03LT,127 to view detailed technical specifications.
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