N-channel Power MOSFET with 30V drain-source voltage and 68.9A continuous drain current. Features TrenchFET process technology for low on-resistance (13mΩ at 10V). Housed in a TO-220AB package with through-hole mounting, this single-element transistor offers a maximum power dissipation of 111W and operates from -55°C to 175°C. Typical gate charge is 9.6nC at 5V, and input capacitance is 920pF at 25V.
Nexperia PHP63NQ03LT,127 technical specifications.
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