N-channel Power MOSFET featuring TrenchFET process technology. 30V drain-source voltage and 75A continuous drain current capability. Low 10mΩ drain-source on-resistance at 10V gate-source voltage. Encased in a TO-220AB package with through-hole mounting. Operates across a wide temperature range from -55°C to 175°C.
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Nexperia PHP71NQ03LT,127 technical specifications.
| Package/Case | TO-220AB |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.4(Max) |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 75A |
| Maximum Drain Source Resistance | 10@10VmOhm |
| Typical Gate Charge @ Vgs | 13.2@5VnC |
| Typical Input Capacitance @ Vds | 1220@25VpF |
| Maximum Power Dissipation | 120000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
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