N-channel Power MOSFET featuring a 200V drain-source voltage and 5.2A continuous drain current. This single-element transistor utilizes an enhancement mode channel and is housed in a TO-220F package with 3 pins and a tab, suitable for through-hole mounting. Key electrical characteristics include a maximum drain-source on-resistance of 400 mOhm at 10V and a typical gate charge of 24 nC at 10V. Operating temperature range spans from -55°C to 150°C.
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Nexperia PHX9NQ20T,127 technical specifications.
| Package/Case | TO-220F |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 15.8(Max) |
| Pin Pitch (mm) | 2.54 |
| Mounting | Through Hole |
| Jedec | TO-220-F |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5.2A |
| Maximum Drain Source Resistance | 400@10VmOhm |
| Typical Gate Charge @ Vgs | 24@10VnC |
| Typical Gate Charge @ 10V | 24nC |
| Typical Input Capacitance @ Vds | 959@25VpF |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
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