NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 40V and a continuous collector current of 0.1A, with a power dissipation of 250mW. This single-element transistor is housed in a 3-pin SOT-23 (TO-236AB) surface-mount package with gull-wing leads. Offers a minimum DC current gain ranging from 40 to 100 across specified collector currents and a minimum transition frequency of 180MHz. Operates across a wide temperature range from -65°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Nexperia PMBS3904/DG,215 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
3(Max)
Package Width (mm)
1.4(Max)
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1.1(Max)
Pin Pitch (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-236AB
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
40V
Maximum DC Collector Current
0.1A
Maximum Power Dissipation
250mW
Minimum DC Current Gain
[email protected]@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V
Maximum Transition Frequency
180(Min)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
H2HX9
HTS Code
8541210075
Schedule B
8541210080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU
Datasheet
Nexperia PMBS3904/DG,215 Datasheet
Download the complete datasheet for Nexperia PMBS3904/DG,215 to view detailed technical specifications.
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