
PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V maximum collector-emitter voltage and 0.2A maximum DC collector current. Offers a maximum power dissipation of 250mW. Packaged in a 3-pin SOT-23 (TO-236AB) surface-mount plastic housing with gull-wing leads. Operates across a temperature range of -65°C to 150°C.
Nexperia PMBT3906/DG,215 technical specifications.
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