P-channel enhancement mode MOSFET for small signal applications. Features a 20V maximum drain-source voltage and 4.1A maximum continuous drain current. Housed in a 6-pin TSOP package with surface mount configuration. Operates within a -55°C to 150°C temperature range, offering a maximum power dissipation of 1285mW.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Nexperia PMN48XP,125 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TSOP |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 3.1(Max) |
| Package Width (mm) | 1.7(Max) |
| Package Height (mm) | 1(Max) |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | 12V |
| Maximum Continuous Drain Current | 4.1A |
| Maximum Gate Threshold Voltage | 1.25V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 8.7@10VnC |
| Typical Gate Charge @ 10V | 8.7nC |
| Typical Input Capacitance @ Vds | 1000@10VpF |
| Maximum Power Dissipation | 1285mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | H2HX9 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Nexperia PMN48XP,125 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
