N-channel silicon power MOSFET featuring a 55V drain-source voltage and 100A continuous drain current. This single-element enhancement mode transistor is housed in a TO-247 package with through-hole mounting. Key specifications include a maximum drain-source on-resistance of 4.2 mOhm at 10V and a typical gate charge of 226 nC at 5V. Operating temperature range spans from -55°C to 175°C, with a maximum power dissipation of 300W.
Sign in to ask questions about the Nexperia PSMN004-55W,127 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Nexperia PSMN004-55W,127 technical specifications.
| Package/Case | TO-247 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.75(Max) |
| Package Width (mm) | 5.2(Max) |
| Package Height (mm) | 20.6(Max) |
| Mounting | Through Hole |
| Jedec | TO-247 |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 55V |
| Maximum Gate Source Voltage | ±15V |
| Maximum Continuous Drain Current | 100A |
| Material | Si |
| Maximum Drain Source Resistance | 4.2@10VmOhm |
| Typical Gate Charge @ Vgs | 226@5VnC |
| Typical Input Capacitance @ Vds | 13@25VpF |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Download the complete datasheet for Nexperia PSMN004-55W,127 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.