N-channel silicon power MOSFET in a TO-247 package, featuring a maximum drain-source voltage of 100V and a continuous drain current of 100A. This single-element enhancement mode transistor offers a low drain-source on-resistance of 9mΩ at 10V, with a typical gate charge of 214nC at 10V. Designed for through-hole mounting, it boasts a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 175°C.
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Nexperia PSMN009-100W,127 technical specifications.
| Package/Case | TO-247 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.75(Max) |
| Package Width (mm) | 5.2(Max) |
| Package Height (mm) | 20.6(Max) |
| Mounting | Through Hole |
| Jedec | TO-247 |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 100A |
| Material | Si |
| Maximum Drain Source Resistance | 9@10VmOhm |
| Typical Gate Charge @ Vgs | 214@10VnC |
| Typical Gate Charge @ 10V | 214nC |
| Typical Input Capacitance @ Vds | 9000@25VpF |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
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