N-channel Power MOSFET, 60V drain-source voltage, 29A continuous drain current. Features low Rds(on) of 24.7mΩ at 10V, 13nC typical gate charge, and 686pF input capacitance. Surface mountable in a 5-pin LFPAK package (4+Tab), MO-235 compliant, with a maximum power dissipation of 56000mW. Operates across a wide temperature range from -55°C to 175°C.
Nexperia PSMN030-60YS technical specifications.
| Package/Case | LFPAK |
| Pin Count | 5 |
| PCB | 4 |
| Tab | Tab |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | MO-235 |
| Configuration | Single Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TMOS |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 29A |
| Maximum Drain Source Resistance | 24.7@10VmOhm |
| Typical Gate Charge @ Vgs | 13@10V|10@10VnC |
| Typical Gate Charge @ 10V | 13nC |
| Typical Input Capacitance @ Vds | 686@30VpF |
| Maximum Power Dissipation | 56000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Nexperia PSMN030-60YS to view detailed technical specifications.
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