N-channel silicon power MOSFET featuring a 200V drain-source voltage and 50A continuous drain current. This single-element transistor utilizes an enhancement mode channel and is housed in a TO-247 package with through-hole mounting. Key specifications include a low 40mΩ drain-source resistance at 10V, typical gate charge of 183nC, and input capacitance of 9530pF. Operating across a wide temperature range from -55°C to 175°C, it offers a maximum power dissipation of 300W.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Nexperia PSMN040-200W,127 technical specifications.
General
| Package/Case | TO-247 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.75(Max) |
| Package Width (mm) | 5.2(Max) |
| Package Height (mm) | 20.6(Max) |
| Mounting | Through Hole |
| Jedec | TO-247 |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 50A |
| Material | Si |
| Maximum Drain Source Resistance | 40@10VmOhm |
| Typical Gate Charge @ Vgs | 183@10VnC |
| Typical Gate Charge @ 10V | 183nC |
| Typical Input Capacitance @ Vds | 9530@25VpF |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | H2HX9 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Nexperia PSMN040-200W,127 Datasheet
Download the complete datasheet for Nexperia PSMN040-200W,127 to view detailed technical specifications.
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