N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 100A continuous drain current. This surface-mount component utilizes LFPAK packaging with 5 pins (4+Tab) and a 1.8mOhm maximum drain-source resistance at 10V. Process technology enables a maximum power dissipation of 272W, with operating temperatures ranging from -55°C to 175°C.
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Nexperia PSMN1R8-40YLC,115 technical specifications.
| Package/Case | LFPAK |
| Pin Count | 5 |
| PCB | 4 |
| Tab | Tab |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | MO-235 |
| Configuration | Single Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | NextPower |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 100A |
| Maximum Gate Threshold Voltage | 1.95V |
| Maximum Drain Source Resistance | 1.8@10VmOhm |
| Typical Gate Charge @ Vgs | 96@10V|88@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 96nC |
| Typical Input Capacitance @ Vds | 6680@20VpF |
| Maximum Power Dissipation | 272000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | H2HX9 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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