N-channel enhancement mode power MOSFET in a TO-220F package. Features a maximum drain-source voltage of 100V and a continuous drain current of 67.5A. Offers a low drain-source on-resistance of 5mΩ at 10V. Designed for through-hole mounting with a single element per chip configuration. Operating temperature range from -55°C to 175°C.
Nexperia PSMN5R0-100XS,127 technical specifications.
| Package/Case | TO-220F |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 15.8(Max) |
| Mounting | Through Hole |
| Jedec | TO-220-F |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 67.5A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 5@10VmOhm |
| Typical Gate Charge @ Vgs | 153@10VnC |
| Typical Gate Charge @ 10V | 153nC |
| Typical Input Capacitance @ Vds | 9900@50VpF |
| Maximum Power Dissipation | 63800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | H2HX9 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
No datasheet is available for this part.
