N-channel enhancement-mode field-effect transistor provides a 100 V drain-source rating and 143 A continuous drain current at 25 °C case temperature. The device has a typical 4 mΩ on-resistance at 10 V gate drive and 20 A drain current, with a 5.5 mΩ maximum rating. It uses a TO-220 package with gate, drain, and source pinout and supports operation from -55 °C to 150 °C junction temperature. The package is specified as halogen-free and lead-free.
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| Transistor Type | N-channel enhancement-mode MOSFET |
| Package | TO-220 |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current at Tc=25°C | 143A |
| Continuous Drain Current at Tc=100°C | 90A |
| Pulsed Drain Current | 350A |
| Drain-Source On-Resistance at Vgs=10V | 5.5 maxmΩ |
| Drain-Source On-Resistance at Vgs=7V | 7.5 maxmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Power Dissipation at Tc=25°C | 227W |
| Operating Junction Temperature Range | -55 to 150°C |
| Junction-to-Case Thermal Resistance | 0.55 max°C/W |
| Input Capacitance | 6716pF |
| Total Gate Charge at Vgs=10V | 146nC |
| Turn-On Delay Time | 98ns |
| Rise Time | 194ns |
| Source-Drain Diode Forward Voltage | 1.2 maxV |
| Reverse Recovery Time | 53ns |
| Lead-free | Yes |
| Halogen-free | Yes |
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