This N-channel logic-level enhancement MOSFET is rated for 100 V drain-source voltage and 123 A continuous drain current at 25°C. It is offered in a TO-252 package and specifies 4.5 mΩ maximum on-resistance at 10 V gate drive. The device supports up to ±20 V gate-source voltage, 150 W power dissipation at 25°C case temperature, and -55°C to 175°C junction and storage operation. Typical dynamic characteristics include 76 nC total gate charge, 4263 pF input capacitance, and 61 ns reverse recovery time, and the package is halogen-free and lead-free.
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Niko Semiconductor PP4B10AD technical specifications.
| Channel Type | N-Channel |
| MOSFET Type | Logic Level Enhancement Mode |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current @ 25°C | 123A |
| Continuous Drain Current @ 100°C | 87A |
| Pulsed Drain Current | 300A |
| Avalanche Current | 26A |
| Avalanche Energy | 338mJ |
| Power Dissipation @ 25°C | 150W |
| Power Dissipation @ 100°C | 75W |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 1°C/W |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| RDS(ON) Max @ VGS=10V, ID=20A | 4.5mΩ |
| Input Capacitance Typical | 4263pF |
| Output Capacitance Typical | 771pF |
| Reverse Transfer Capacitance Typical | 7.3pF |
| Total Gate Charge Typical | 76nC |
| Gate-Source Charge Typical | 17nC |
| Gate-Drain Charge Typical | 23nC |
| Turn-On Delay Time Typical | 27ns |
| Rise Time Typical | 72ns |
| Turn-Off Delay Time Typical | 71ns |
| Fall Time Typical | 88ns |
| Source-Drain Diode Forward Voltage Max | 1.2V |
| Reverse Recovery Time Typical | 61ns |
| Reverse Recovery Charge Typical | 100nC |
| Halogen Free | Yes |
| Lead Free | Yes |
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