This device is an N-channel enhancement mode power MOSFET rated for 100 V drain-source voltage and 139 A continuous drain current at 25 °C case temperature. It is offered in a TO-263 package and specifies a maximum drain-source on-resistance of 4.4 mΩ at 10 V gate drive. The MOSFET supports 350 A pulsed drain current, 392 mJ avalanche energy, and 187 W power dissipation at 25 °C case temperature. Operating junction and storage temperature range from -55 °C to 175 °C, and the part is identified as halogen-free and lead-free.
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Niko Semiconductor PP4B10AS technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 139A |
| Continuous Drain Current (Tc=100°C) | 98A |
| Pulsed Drain Current | 350A |
| Avalanche Current | 28A |
| Avalanche Energy | 392mJ |
| Power Dissipation (Tc=25°C) | 187W |
| Operating Junction and Storage Temperature Range | -55 to 175°C |
| Package Type | TO-263 |
| Drain-Source On-Resistance Max at VGS=10V | 4.4mΩ |
| Gate Threshold Voltage | 2 to 4V |
| Input Capacitance | 4145pF |
| Output Capacitance | 762pF |
| Reverse Transfer Capacitance | 10pF |
| Total Gate Charge | 75nC |
| Gate-Drain Charge | 23nC |
| Source-Drain Diode Forward Voltage | 1.2V |
| Lead-free | Yes |
| Halogen-free | Yes |
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