This device is an N-channel enhancement mode power MOSFET in a TO-220 package. It is rated for 100 V drain-source voltage, 137 A continuous drain current at 25 °C, and 187 W power dissipation at 25 °C. The maximum on-resistance is 4.5 mΩ at 10 V gate drive, with typical input capacitance of 4145 pF and typical total gate charge of 75 nC. The gate-source voltage rating is ±20 V and the operating junction temperature range extends from -55 °C to 175 °C. The part is specified as halogen-free and lead-free.
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Niko Semiconductor PP4B10AT technical specifications.
| Transistor Type | N-Channel |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current @ 25°C | 137A |
| Continuous Drain Current @ 100°C | 97A |
| Pulsed Drain Current | 350A |
| Power Dissipation @ 25°C | 187W |
| Operating Junction Temperature Range | -55 to 175°C |
| RDS(on) Max @ VGS=10V | 4.5mΩ |
| Gate Threshold Voltage | 2 to 4V |
| Input Capacitance | 4145pF |
| Output Capacitance | 762pF |
| Reverse Transfer Capacitance | 10pF |
| Total Gate Charge | 75nC |
| Gate-Drain Charge | 23nC |
| Reverse Recovery Time | 63ns |
| Reverse Recovery Charge | 95nC |
| Halogen-free | Yes |
| Lead-free | Yes |
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