This device is an N-channel logic-level enhancement mode field effect transistor rated for 100 V drain-to-source breakdown voltage. It supports 134 A continuous drain current at 25 °C case temperature and provides a maximum 4.2 mΩ on-resistance at 10 V gate drive. The part is housed in a TO-263 package and is specified as halogen-free and lead-free. Its datasheet also specifies 166 W power dissipation at 25 °C case temperature, 88 nC total gate charge, and 4242 pF typical input capacitance.
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Niko Semiconductor PP4B10BS technical specifications.
| Drain-Source Breakdown Voltage | 100V |
| Continuous Drain Current (Tc=25°C) | 134A |
| Continuous Drain Current (Tc=100°C) | 94A |
| Pulsed Drain Current | 370A |
| Gate-Source Voltage | ±20V |
| Avalanche Current | 20A |
| Avalanche Energy | 200mJ |
| Power Dissipation (Tc=25°C) | 166W |
| Power Dissipation (Tc=100°C) | 83W |
| Operating Junction Temperature Range | -55 to 175°C |
| Junction-to-Case Thermal Resistance | 0.9°C/W |
| Junction-to-Ambient Thermal Resistance | 62.5°C/W |
| Drain-Source On-Resistance (Vgs=10V, Id=20A) | 4.2 maxmΩ |
| Drain-Source On-Resistance (Vgs=4.5V, Id=20A) | 5.6 maxmΩ |
| Gate Threshold Voltage | 1 to 3V |
| Input Capacitance | 4242pF |
| Output Capacitance | 744pF |
| Reverse Transfer Capacitance | 9pF |
| Total Gate Charge | 88nC |
| Gate-Source Charge | 9.8nC |
| Gate-Drain Charge | 25nC |
| Turn-On Delay Time | 21ns |
| Rise Time | 63ns |
| Turn-Off Delay Time | 109ns |
| Fall Time | 133ns |
| Continuous Source Current | 131A |
| Source-Drain Forward Voltage | 1.2V |
| Reverse Recovery Time | 61ns |
| Reverse Recovery Charge | 88nC |
| Halogen-free | Yes |
| Lead-free | Yes |
