This device is a PNP general-purpose transistor in a small SOT23 (TO-236AB) surface-mounted plastic package. It is rated for 65 V collector-emitter voltage and 100 mA collector current. The device has 250 mW total power dissipation, a minimum transition frequency of 100 MHz, and a junction temperature rating up to 150 °C. Nexperia lists a DC current gain range of 220 to 475 for the B gain group, and identifies BC847B as the NPN complement.
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North American Philips BC857B technical specifications.
| Max Operating Temperature | 150 |
| RoHS | No |
| REACH | unknown |
| Military Spec | False |
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