This device is a 100 V N-channel enhancement-mode trench MOSFET. It is supplied in a small SOT23 (TO-236AB) surface-mount plastic package. The transistor uses trench MOSFET technology and is intended for compact switching and control functions where a small discrete MOSFET is required.
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North American Philips BSS123 technical specifications.
| Max Operating Temperature | 150 |
| RoHS | No |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for North American Philips BSS123 to view detailed technical specifications.
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