NPN silicon Darlington power transistor for general-purpose amplification and low-speed switching applications. The device is rated for 60 V collector-emitter sustaining voltage and 5 A continuous collector current, with 65 W power dissipation at a 25°C case temperature. It uses monolithic construction with built-in base-emitter shunt resistors and is shown in a TO-220AB compact package style. Typical DC current gain is 2500 at 4.0 A, and the operating and storage junction temperature range extends from -65°C to +150°C.
Checking distributor stock and pricing after the page loads.
| Max Operating Temperature | 150 |
| RoHS | No |
| REACH | unknown |
| Military Spec | False |
