This single-channel smart isolated gate driver is designed to drive IGBT, power MOSFET, and SiC MOSFET devices. It operates from a 3 V to 5.5 V input-side supply and supports a driver-side supply up to 32 V with undervoltage lockout. The device provides 10 A source and 10 A sink peak drive capability, 150 kV/µs minimum common-mode transient immunity, and 80 ns typical propagation delay. Integrated protection features include a 4.0 A Miller clamp, 9 V DESAT protection, 400 mA soft shutdown, and fault signaling for short-circuit or undervoltage events. It is specified for operation from -40 °C to 125 °C and is packaged in SOW16.
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| Channel Count | 1 |
| Input Supply Voltage Min | 3V |
| Input Supply Voltage Max | 5.5V |
| Driver Supply Voltage Max | 32V |
| Peak Source Current | 10A |
| Peak Sink Current | 10A |
| Common Mode Transient Immunity Min | 150kV/µs |
| Propagation Delay Typ | 80ns |
| Pulse Width Distortion Max | 30ns |
| Minimum Input Pulse Width | 40ns |
| Miller Clamp Current | 4.0A |
| DESAT Threshold | 9V |
| Soft Shutdown Current | 400mA |
| Operating Temperature Min | -40°C |
| Operating Temperature Max | 125°C |
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