The NTE Electronics 2N3583 is a TO-66-2 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 175V and a maximum collector current of 10mA. It has a maximum power dissipation of 35W and can operate at temperatures up to 200°C. The transistor is mounted through a hole and is compliant with RoHS regulations. It is not compliant with Reach SVHC regulations. The transistor has a transition frequency of 20MHz.
PackageTO-66-2
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics 2N3583 technical specifications.
General
| Package/Case | TO-66-2 |
| Collector Emitter Breakdown Voltage | 175V |
| Collector Emitter Voltage (VCEO) | 175V |
| Max Collector Current | 10mA |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 20MHz |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics 2N3583 Datasheet
Download the complete datasheet for NTE Electronics 2N3583 to view detailed technical specifications.
No datasheet is available for this part.