The NTE Electronics 2N6059 is a TO-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 12A. It is designed for chassis mount applications and has a maximum power dissipation of 150W. The transistor is RoHS compliant and lead free. It operates within a temperature range that is not specified in the provided data.
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NTE Electronics 2N6059 technical specifications.
| Package/Case | TO-3 |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 12A |
| Lead Free | Lead Free |
| Max Collector Current | 1mA |
| Max Power Dissipation | 150W |
| Mount | Chassis Mount |
| Packaging | Tray |
| Polarity | NPN |
| Power Dissipation | 150W |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
Download the complete datasheet for NTE Electronics 2N6059 to view detailed technical specifications.
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