The NTE100 is a PNP bipolar junction transistor with a maximum collector current of 100mA and a collector-emitter breakdown voltage of 24V. It is packaged in a TO-5 case with a 3-pin configuration and is designed for through-hole mounting. The transistor has a maximum power dissipation of 150mW and is rated for operation between -65°C and 100°C. It is not RoHS compliant.
PackageTO-5
Current Rating100mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
NTE Electronics NTE100 technical specifications.
General
| Package/Case | TO-5 |
| Collector Base Voltage (VCBO) | 25V |
| Collector Emitter Breakdown Voltage | 24V |
| Collector Emitter Voltage (VCEO) | 24V |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 12V |
| Max Collector Current | 5uA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Through Hole |
| Polarity | PNP |
| Power Dissipation | 150mW |
| RoHS Compliant | No |
| DC Rated Voltage | 24V |
Compliance
| RoHS | Not Compliant |
Datasheet
NTE Electronics NTE100 Datasheet
Download the complete datasheet for NTE Electronics NTE100 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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