Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
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NTE Electronics NTE198 technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 500V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.61inch |
| Length | 0.42inch |
| Max Collector Current | 1mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 40W |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| RoHS | Compliant |
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