NTE Electronics
NTE222
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72
PackageTO-72
MountingThrough Hole
PolarityN
Power360mW
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Technical Specifications
NTE Electronics NTE222 technical specifications.
General
| Package/Case | TO-72 |
| Continuous Drain Current (ID) | 50mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 0.19inch |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 360mW |
| Mount | Through Hole |
| Polarization | N |
| Power Dissipation | 360mW |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Width | 0.22inch |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE222 Datasheet
Download the complete datasheet for NTE Electronics NTE222 to view detailed technical specifications.
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