The NTE2300 is a high-power NPN transistor with a collector-emitter breakdown voltage of 800V and a current rating of 5A. It can handle a maximum power dissipation of 120W and operates over a temperature range of -55°C to 150°C. The transistor is mounted through a hole and is RoHS compliant. Its transition frequency is 3MHz, and it has a collector-emitter saturation voltage of 5V.
Sign in to ask questions about the NTE Electronics NTE2300 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NTE Electronics NTE2300 technical specifications.
| Collector Base Voltage (VCBO) | 1.5kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 5V |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 5V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 0.787inch |
| Length | 0.614inch |
| Max Collector Current | 10uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 120W |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| DC Rated Voltage | 800V |
| Width | 0.19inch |
| RoHS | Compliant |
Download the complete datasheet for NTE Electronics NTE2300 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
