NTE Electronics
NTE2353
Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PML, 3 PIN
MountingThrough Hole
PolarityNPN
Power70W
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Technical Specifications
NTE Electronics NTE2353 technical specifications.
General
| Collector Base Voltage (VCBO) | 1.5kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 5V |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 5V |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 0.866inch |
| Length | 0.629inch |
| Max Collector Current | 1mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Polarity | NPN |
| Power Dissipation | 70W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 0.22inch |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE2353 Datasheet
Download the complete datasheet for NTE Electronics NTE2353 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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