The NTE2357 is a TO-226-3 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500nA. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 300mW. The transistor is RoHS compliant and suitable for use in high-frequency applications, with a transition frequency of 250MHz.
NTE Electronics NTE2357 technical specifications.
| Package/Case | TO-226-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Max Collector Current | 500nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| RoHS | Compliant |
No datasheet is available for this part.
