NTE Electronics
NTE2359
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
PackageTO-226-3
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
NTE Electronics NTE2359 technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Max Collector Current | 500nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE2359 Datasheet
Download the complete datasheet for NTE Electronics NTE2359 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.