
The NTE2359 is a TO-226-3 packaged NPN transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500nA. It can operate at temperatures ranging from -55°C to 150°C and has a maximum power dissipation of 300mW. The transistor is RoHS compliant and suitable for through-hole mounting.
Sign in to ask questions about the NTE Electronics NTE2359 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NTE Electronics NTE2359 technical specifications.
| Package/Case | TO-226-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Max Collector Current | 500nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| RoHS | Compliant |
Download the complete datasheet for NTE Electronics NTE2359 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.