NTE2372

Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

PackageTO-220

MountingThrough Hole

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NTE Electronics NTE2372 technical specifications.

Package/Case

TO-220

Continuous Drain Current (ID)

3.5A

Drain to Source Voltage (Vdss)

200V

Gate to Source Voltage (Vgs)

20V

Input Capacitance

350pF

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

40W

Mount

Through Hole

Rds On Max

1.5R

RoHS Compliant

Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.