Power Bipolar Transistor, 25A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
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NTE Electronics NTE2533 technical specifications.
| Collector Base Voltage (VCBO) | 1.5kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector-emitter Voltage-Max | 5V |
| Emitter Base Voltage (VEBO) | 6V |
| Max Collector Current | 1mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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