The NTE29 is a TO-3 flange mount bipolar junction transistor with a maximum collector-emitter breakdown voltage of 80V and a maximum collector current of 1mA. It features a maximum power dissipation of 300W and operates over a temperature range of -65°C to 200°C. The transistor is RoHS compliant and has a transition frequency of 2MHz. It is a through-hole mount device with a package type of O-MBFM-P2.
PackageTO-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
NTE Electronics NTE29 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 5V |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 1mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
Compliance
| RoHS | Compliant |
Datasheet
NTE Electronics NTE29 Datasheet
Download the complete datasheet for NTE Electronics NTE29 to view detailed technical specifications.
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