The NTE3320 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 50A. It can handle a maximum power dissipation of 240W. The device is mounted through a hole and is compliant with RoHS regulations. It is not compliant with SVHC regulations. The NTE3320 is a flange mount, R-PSFM-T3 packaged transistor.
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NTE Electronics NTE3320 technical specifications.
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.45V |
| Input Type | STANDARD |
| Max Collector Current | 50A |
| Max Power Dissipation | 240W |
| Mount | Through Hole |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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